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C-RAM ready to go into production
The European company STMicroelectronics together with the North American Ovonyx announce the development of a non-volatile memory chip that uses a rather non-standard approach for encoding the recorded information – in the form of different phases in microscopic regions of the chalcogenide polymer. The joint work, which will be presented at the June VLSI Technology and Circuits Symposia, asserts the possibility of producing such chips in standard CMOS (CMOS) processes using trench technology (uTrench technology).
New types of memory called Chalcogenide RAM (C-RAM) and Phase Change Memory (PC-RAM or PRAM) take advantage of the fact that in one phase the carrier material is a non-conductive amorphous (glass-like) material, in the second it is a crystalline conductor. C-RAM memory cells are capable of reversible transition from one phase to another under the influence of heat and electric fields, and, unlike conventional RAM or flash memory, are resistant to ionizing radiation. Of course, C-RAM is unlikely to be able to seriously compete with traditional types of memory in terms of speed and power consumption (after all, to switch from one phase to another, you have to use a microscopic, but a heating element that consumes a large current).
According to ST and Ovonyx, the cell size is 0.32 sq. μm when released according to 0.18-μm standards. The current consumed by one cell is 600 μA. One C-RAM cell is capable of withstanding 10-11 billion. rewriting cycles and provides data storage for up to 10 years at temperatures not exceeding 110 degrees Celsius.
The announcement of the production-ready C-RAM chip is the result of a collaboration between the two companies that began in 2000.