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Semiconductor spintronic logic gate: towards quantum computers

The dream of theorists and experimenters – a quantum computer may not be so far from being realized. According to researchers from the University of Utah, they managed to create an organic spintronic key – a device that changes its conductivity depending on how the magnetic field interacts with the spin magnetic moments of electrons.

Spin interactions, long and generally well known, have recently become an object of research more and more often, which is explained by the desire to create in the future a quantum computing machine that has such properties characteristic of a supercomputer as a high computation speed and the ability to work with large volumes of data due to such a specific quantum property as the possibility of parallel storage and processing of information. For convenience, experimenters prefer to work with two-level quantum systems: electrons (fermions with two possible spin projections on the axis) and photons with a discrete set of polarization directions.

Spintronic switches, which are an intermediate stage on the path to quantum computing, usually consist of a thin layer of metal or dielectric between two electrodes of a ferromagnetic material. Since the direction of the magnetic moment of the electrons of the electrode can change under the influence of an external magnetic field, the conductivity (the reciprocal of the electrical resistance) of the key changes radically depending on the orientation of the spins. This effect, also known as magnetoresistivity, is already being used to create magnetoresistive memory cells and, as suggested by some, could be used to create computational elements of the future.

Until now, however, spin effects have not yet been properly realized in semiconductors. Utah researchers have created a spintronic key from a thin (thickness – 100 nm) layer of organic semiconductor, consisting of aluminum and hydroxyquinoline (hydroxyquinoline). The electrodes, between which an organic semiconductor was located, were made of cobalt and an alloy of lanthanum, strontium and magnesium.

In the experiment, scientists managed to achieve a 40% change in the value of the current passing through the switch, depending on the joint direction of the magnetization vectors of two electrons – the current increases if the anti-parallel magnetization vectors become parallel. Since quantum spin properties are manifested in a microscopic device of this kind, we can expect that at the appropriate level of scaling (that is, after 15-20 years), an integral quantum chip will be created on the basis of such a cell. So far, however, there is one significant limitation – the device works only at temperatures from –260 to ?40 degrees Celsius, but scientists do not lose hope.

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